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Phototransistor, top view type
RPT-34PB3F
The RPT-34PB3F is a silicon planar phototransistor.
It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode.
? Applications
Optical control equipment
? Dimensions (Units : mm)
φ 3.8 ± 0.3
φ 3.5
φ 3.1 ± 0.2
Notes :
1. Unspecfied tolerance
shall be ± 0.2.
2. Dimension in parenthesis
are show for reference.
? Features
High sensitivity.
2 ? 0.6
2 ? 0.5
2
1
(2.5)
Internal connection diagram
? Absolute maximum ratings (Ta = 25 ? C)
1
Emitter
2
Collector
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Symbol
V CEO
V ECO
I C
P C
Topr
Tstg
Limits
32
5
30
150
? 25~ + 85
? 30~ + 85
Unit
V
V
mA
mW
° C
° C
? Electrical and optical characteristics (Ta = 25 ? C)
Parameter
Light current
Dark current
Peak sensitivity wavelength
Collector-emitter saturation voltage
Half-angle
Response time
Symbol
I C
I CEO
λ P
V CE(sat)
θ 1 / 2
t r ·t f
Min.
2.0
?
?
?
?
?
Typ.
?
?
800
?
± 36
10
Max.
?
0.5
?
0.4
?
?
Unit
mA
μ A
nm
V
deg
μ s
Conditions
V CE = 5V, E = 500L X
V CE = 10V(Black box)
?
I C = 1mA, E = 500L X
?
V CC = 5V, I C = 1mA, R L = 100 Ω
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2010.06 - Rev.A
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